Thermal Runaway in Mold‐Assisted Flash Sintering
نویسندگان
چکیده
منابع مشابه
Thermal runaway, flash sintering and asymmetrical microstructural development of ZnO and ZnO–Bi2O3 under direct currents
DC flash sintering of both pure and 0.5 mol.% Bi2O3-doped ZnO at a relatively high activating field of 300 V/cm has been investigated. It is demonstrated that even high-purity ZnO single crystals can “flash” at 870 C. In comparison, flash sintering occurs at a substantially lower onset temperature of 550 C in ZnO powder specimens, indicating the important roles of surfaces and/or grain boundari...
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ژورنال
عنوان ژورنال: Journal of the American Ceramic Society
سال: 2016
ISSN: 0002-7820,1551-2916
DOI: 10.1111/jace.14413